PART |
Description |
Maker |
MTP33N10E_D MTP33N10 ON2594 MTP33N10E MTP33N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM
|
ON Semiconductor MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] Motorola, Inc.
|
MTD6N10E ON2512 MTD6N10E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTD14N10E_D |
TMOS POWER FET 14 AMPERES 100 VOLTS
|
ON Semi
|
MTD6N10 |
TMOS POWER FET 6 AMPERES RDS(on) = 0.25 OHM 80 and 100 VOLTS
|
Motorola
|
MTP10N10EL ON2537 |
From old datasheet system TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS
|
MOTOROLA[Motorola, Inc]
|
MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS 7 E-FET High Energy Power FET From old datasheet system TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET High Energy Power FET TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
MTY16N80E_D MTY16N80E ON2712 MTY16N80E-D |
TMOS E-FET Power Field Effect Transistor TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
MTD3N25E MTD3N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
BSS123LT3G BSS123LT1 BSS123LT1D BSS123LT1G BSS123L |
Power MOSFET 170 mAmps, 100 Volts N-Channel SO-23(170 mA, 100 V,N通道SOT3封装的功率MOSFET) TMOS FET Transistor
|
ONSEMI[ON Semiconductor]
|